Three-component semiconductors open up new possibilities for creating semiconductor devices.One of the promising three-component semiconductors is indium-gallium nitride InxGa1-xN, which is considered as a solid alloy of binary compounds - indium nitride InN and gallium nitride GaN.Prediction of the prospects for creating devices based on InxGa1-xN is possible with a thorough study of the electrical properties of its binary nitrides; indium nitride and gallium nitride.In the scientific literature, for these nitrides, studies of the Hall mobility predominate, the temperature dependence of which is described in a narrow range of impurity concentration values and the correspondence of the simulation results to the experimental ones is obtained by introducing correction factors.The aim of this work is to calculate the temperature dependence of the electron drift mobility forInNand GaN in a wide range of the degree of doping of semiconductors and to choice the initial parameters of the materials that make it possible to obtain the best agreement with the experimental results.For the nitrides under study, numerical modeling of scattering processes for typical types of impurity (on neutral atoms and impurity ions) and phonon (acoustic, polar optical, intervalley) mechanisms was carried out; momentum scattering rates were calculated and analyzed.For the first time for indium and gallium nitrides, a temperature dependence of the electron drift mobility was calculated in a wide range of values of the dopant concentration. The simulation results were verified.The field-velocity characteristics were calculated by the method of relaxation equations and compared with the results obtained by the Monte-Carlo method.For the nitrides under study, initial parameters are proposed that ensure agreement with experimental data when simulating the transport properties of electrons in a weak electric field mode.The results of numerical simulations indicate that it is promising to create highly efficient, high-speed, powerful devices for various purposes based on indium nitride and gallium nitride.