The minimum specific on-resistance of 4H-SiC{0001} unipolar devices as a function of the breakdown voltage was updated based on latest studies on intrinsic physical properties, such as impact ionization coefficients. Both punch-through (PT) and nonpunch-through (NPT) structures were considered, because a PT structure generally gives a lower on-resistance at a given breakdown voltage. The minimum specific on-resistance of 1 kV 4H-SiC devices can be as low as 0.20 mΩ cm2 at room temperature. An analytical expression for the relationship between the specific on-resistance and breakdown voltage is given.