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ZENODO
Article . 2017
License: CC BY
Data sources: Datacite
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ZENODO
Article . 2017
License: CC BY
Data sources: ZENODO
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ZENODO
Article . 2017
License: CC BY
Data sources: Datacite
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Study Of Electrical Characteristic Of New P-Type Trenched Umosfet

descriptionPublicationkeyboard_double_arrow_right Article 10 Aug 2017Publisher:Zenodo
Authors: Akansha Ephraim*, Neelesh Agrawal;

doi: 10.5281/zenodo.841194 , 10.5281/zenodo.841193

Study Of Electrical Characteristic Of New P-Type Trenched Umosfet

Abstract

In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.

Keywords

Trenched, MOSFET, UMOSFET, RSO

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selected citations
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This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
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