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doi: 10.5281/zenodo.8171803 , 10.5281/zenodo.8171781 , 10.5281/zenodo.15355245 , 10.5281/zenodo.15355358 , 10.5281/zenodo.15355343 , 10.5281/zenodo.15355267 , 10.5281/zenodo.15355249 , 10.5281/zenodo.15355320 , 10.5281/zenodo.15355287 , 10.5281/zenodo.8171792 , 10.5281/zenodo.15355221 , 10.5281/zenodo.3550935
doi: 10.5281/zenodo.8171803 , 10.5281/zenodo.8171781 , 10.5281/zenodo.15355245 , 10.5281/zenodo.15355358 , 10.5281/zenodo.15355343 , 10.5281/zenodo.15355267 , 10.5281/zenodo.15355249 , 10.5281/zenodo.15355320 , 10.5281/zenodo.15355287 , 10.5281/zenodo.8171792 , 10.5281/zenodo.15355221 , 10.5281/zenodo.3550935
Allpix Squared is a generic, open-source software framework for the simulation of semiconductor pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model files describing the detector parameters. The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement separate simulation steps such as realistic charge carrier deposition with the Geant4 toolkit or propagation of charge carriers in silicon using a drift-diffusion model. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behaviour of charge carriers within the silicon, bringing a new level of realism to Monte Carlo based simulations of particle detectors.
TCAD, Geant4, Drift-Diffusion, Simulation, Silicon Detectors
TCAD, Geant4, Drift-Diffusion, Simulation, Silicon Detectors
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