This study theoretically analyzes the two-dimensional electron gas (2DEG) of InAs in the matter of thermodynamics proprieties and the effects of the magnetic field, Landau levels, and temperature on its corresponding behavior. InAs is a combination of two groups of semiconductors (III and V groups) which require chemical reaction to process the binding between these two and emphasize the importance of investigating and calculating the chemical potential and the required magnetization amount. The electron of a Two-Dimensional Gas Electron (2DEG) can move freely in two dimensions which creates the third direction motion by different quantized energy levels. This study will emphasize the thermodynamic properties of InAs and provide a suitable calculation to identify its behavior regarding heat capacity, chemical potential, and other factors. This behavior leads to the use InAs in the production of diode laser.