{"references": ["1. A. Pique, D.B. Chrisey, R.C. Augeung, V. et al. A. novel laser transfer process for direct writing of electronic and sensor materials//Applied Physics A/ - 1999 \u2013 V. 69. \u21166 2. M.T. Normuradov, A.S. Risbaev, D.A. Normurodov, K.T. Dovranov, H.T. Davranov. Composition and electronic structure of nanosized BaSi2 phases created in the subsurface region of Si. \u041b\u0430\u0437\u0435\u0440\u043d\u044b\u0435, \u041f\u043b\u0430\u0437\u043c\u0435\u043d\u043d\u044b\u0435 \u0418\u0441\u0441\u043b\u0435\u0434\u043e\u0432\u0430\u043d\u0438\u044f \u0438 \u0422\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u0438. \u041c., 22\u201325 \u043c\u0430\u0440\u0442\u0430 2022 \u0433. 3. \u042d\u043b\u0435\u043a\u0442\u0440\u043e\u043d\u043d\u0430\u044f \u0441\u0442\u0440\u0443\u043a\u0442\u0443\u0440\u0430 \u0438 \u0444\u0438\u0437\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0441\u0432\u043e\u0439\u0441\u0442\u0432\u0430 \u043d\u0430\u043d\u043e\u0440\u0430\u0437\u043c\u0435\u0440\u043d\u044b\u0445 \u0433\u0435\u0442\u0435\u0440\u043e\u0441\u0442\u0443\u043a\u0442\u0443\u0440. \u041c\u043e\u043d\u043e\u0433\u0440\u0430\u0444\u0438\u044f \u043f\u043e\u0434 \u0440\u0435\u0434\u0430\u043a\u0446\u0438\u0435\u0439 \u041d\u043e\u0440\u043c\u0443\u0440\u043e\u0434\u043e\u0432\u0430 \u041c.\u0422., \u0423\u043c\u0438\u0440\u0437\u0430\u043a\u043e\u0432\u0430 \u0411.\u0415. \u041a\u0430\u0440\u0448\u0438-2021 \u0433.265 \u0441. 4. H.Gnaser, B.Huber, Ch.Ziegler//Encyclopedia of Nanoscience and Nanotechnology. Vol. 6.505 (2004) 5. M.T. Normuradov, D.A. Normurodov, K.T. Davronov. Creation of new materials based on dielectric films using low-energy ion implantation. Euroasian Journal of Semiconductors Science and Engineering, 1(6), 8. (2019)."]}

Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10-5 sm3/C.