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By methods of physical and chemical analysis, the mode of synthesis of compounds LaBvTe3 (Bv-Sb, Bi) indirectly was established. It has been established that the compound LaBvTe3 crystallizes in the tetradymite structural type with space group D3d5-R3m, hexagonal cell parameters for LaSbTe3 a= 4.24Å, b=30.64Å, c/a=7.1 and for LaBiTe3 a= 4.36Å b=30.70Å, s/a=7.04 It was revealed that they are narrow-gap n-type semiconductors, for LaSbTe3 ΔE=0.18 eV; dpykn.=6.62 g/cm3, drent.=6.69 g/cm3, Hμ=2110 MPa and for LaBiTe3 ΔE=0.21 eV, dpykn.=7.15 g/cm3, drent/=7.20 g/cm3, Hμ= 1955MPa
synthesis, indirect, crystallization, space group, temperature
synthesis, indirect, crystallization, space group, temperature
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