
Compilation of the datasets used to generate the figures in the following journal publication: "Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4-TCNQ" by Yefei Yin, Atasi Chatterjee, Davood Momeni, Mattias Kruskopf, Martin Götz, Stefan Wundrack, Frank Hohls, Klaus Pierz, and Hans W. Schumacher, Adv. Physics Res. 2022, DOI: 10.1002/apxr.202200015
This work was supported in part by the Joint Research Project GIQS (18SIB07). This project received funding from the European Metrology programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132, Grant no: 18SIB07 GIQS.
graphene functionalization, molecu- lar doping, epitaxial graphene on SiC, quantum resistance metrology, F4-TCNQ, quantum Hall resistance
graphene functionalization, molecu- lar doping, epitaxial graphene on SiC, quantum resistance metrology, F4-TCNQ, quantum Hall resistance
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