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handle: 11572/369729
A design modification to an existing 3D-trenched pixel detector is proposed, aimed at an improved fabrication yield. The device concept is studied and its performance is evaluated by TCAD simulations, in comparison to the existing one. Although the modified design features a less uniform electric field distribution, it is still expected to yield a very good timing performance and high radiation tolerance, also exploiting charge multiplication effects.
TCAD, Physics, QC1-999, 3D sensors, radiation hardness, silicon radiation detectors, 3D sensors, fabrication technology, radiation hardness, timing, TCAD, WP6, silicon radiation detectors, timing, silicon radiation detectors; 3D sensors; fabrication technology; radiation hardness; timing; TCAD, fabrication technology
TCAD, Physics, QC1-999, 3D sensors, radiation hardness, silicon radiation detectors, 3D sensors, fabrication technology, radiation hardness, timing, TCAD, WP6, silicon radiation detectors, timing, silicon radiation detectors; 3D sensors; fabrication technology; radiation hardness; timing; TCAD, fabrication technology
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