Abstract: SIC and other WBG devices raised new challenges to higher power density and higher temperature, that brings more harsh requirements for the design and implementation of IPMs. These slides will brief the characteristics of SIC and other WBG devices, analyze the requirements of new devices for module designs, and give electrical and thermodynamic simulation methods from the actual product designs of IPMs, which emphasizes optimized integration of power module and gate driver circuits. Our design methodology will provide customers in-depth understanding of the characteristics of SIC MOSFET based IPMs for high density and high temperature applications.