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We acknowledge Luk���� Kacht��k for discussions of TEM data and Tom���� Mus��lek for deposition of Ga layers in the complex UHV system. The research was supported by European Commission (H2020-Twinning project No. 810626 ��� SINNCE) and Brno University of Technology (Specific research No.*FSI-S-20-6485). Stella Vallejos acknowledges the support of the Spanish Ministry of Science and Innovation via PID2019-107697RB-C42 (AEI/FEDER, EU). Part of the work was carried out with the support of CEITEC Nano Research Infrastructure (ID LM2018110).
This archive contains the raw unfileterd data to the Pejchal et al., Ga interaction with ZnO surfaces: diffusion and melt-back etching, Applied Surface Science, Volume 583, 1 May 2022, 152475.
gallium, XPS, diffusion doping, melt-back etching, oxygen vacancy, ZnO whiskers
gallium, XPS, diffusion doping, melt-back etching, oxygen vacancy, ZnO whiskers
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