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COMSOL Model of a Three-Gate Junctionless Transistor

Authors: Rusev, Rostislav; Angelov, George; Ruskova, Ivelina; Gieva, Elitsa; Nikolov, Dimitar; Spasova, Mariya; Hristov, Marin; +1 Authors

COMSOL Model of a Three-Gate Junctionless Transistor

Abstract

A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.

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Keywords

radical, 3D TCAD model, air sensor, atmospheric radicals, nanowire junctionless transistor, air quality monitoring, nanowire junctionless transistor, 3D TCAD model, radical, environmental monitoring, air quality monitoring, atmospheric radicals, junctionless nanowire transistor, environmental monitoring

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selected citations
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This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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