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A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.
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radical, 3D TCAD model, air sensor, atmospheric radicals, nanowire junctionless transistor, air quality monitoring, nanowire junctionless transistor, 3D TCAD model, radical, environmental monitoring, air quality monitoring, atmospheric radicals, junctionless nanowire transistor, environmental monitoring
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