In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.