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Conference object . 2020
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License: CC BY
Data sources: Datacite
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Precision beta-spectrum measurement of RaE with semiconductror spectrometers

Authors: Irina Lomskaya; Eugeny Unzhakov; Dmitry Semenov; Igor Alexeev; Irina Kotina; Valentina Muratova; Sergey Bakhlanov; +2 Authors

Precision beta-spectrum measurement of RaE with semiconductror spectrometers

Abstract

In this work we present a precision measurement of the beta-spectrum shape for $^{210}$Bi (historically RaE) performed with spectrometers based on semiconductor Si(Li) detectors. The studies were performed with spectrometers in target-detector and 4-$\pi$ geometries. The measured transition form-factor could be approximated as $H(W) = 1 + (-0.449 \pm 0.002) W + (0.0553 \pm 0.0004) W^2 $ and $H(W) = 1 + (-0.441 \pm 0.002) W + (0.0545 \pm 0.0004) W^2 $ for the target-detector and 4-$\pi$ spectrometer respectively that is in good agreement between the two experiments as well as with the previous studies. The form-factor parameter precision has been substantially increased with respect to the previous experimental results.

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This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
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