DOPING DEPENDENCY ON ABSORPTION SPECTRUM OF INTRABAND TRANSITION BASED PHOTODETECTOR

descriptionPublicationkeyboard_double_arrow_right Article 31 Mar 2020Publisher:International Journal Of Advanced ResearchJournal:International Journal of Advanced Research, volume 8, pages 817-823 (eissn: 2320-5407,

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Authors: Sumit Narayan Saurov;

doi: 10.21474/ijar01/10695 , 10.5281/zenodo.3778144 , 10.5281/zenodo.3778145

DOPING DEPENDENCY ON ABSORPTION SPECTRUM OF INTRABAND TRANSITION BASED PHOTODETECTOR

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Abstract

Intraband transition-based quantum cascaded photodetector is designed using GaN/AlN system. Carrier density distribution and dipole matrix element is calculated to determine the strength of optical transition. Doping effect on absorption spectrum has been investigated numerically.

Related Organizations

Ahsanullah University of Science and Technology
Bangladesh

Keywords

Photodetector Intersubband Dipole Matrix Element Absorption Coefficient Photo-Excitation

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