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Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allow the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview on the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.
This work has been supported by MUPIA project within the Clean Sky 2 program, Horizon 2020 Programme, grant no. 785337.
Zero-level packaging, MEMS, Sensors, Integration, TSV, Trough Silicon Via, zero-level packaging
Zero-level packaging, MEMS, Sensors, Integration, TSV, Trough Silicon Via, zero-level packaging
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