Silicon-based computational architectures face severe physical limits from high thermal resistance, parasitic RC delays, and breakdown at high powers. Single-crystal CVD diamond overcomes these challenges via its ultra-wide bandgap (5.5 eV) and unmatched thermal conductivity (~2200 W/m·K). This paper presents the architecture, physical modeling, and simulation of a novel diamond processor incorporating Optically Gated Junction Field-Effect Transistors (OG-JFETs) and all-fiber-optic interconnects. Nanoscale boron delta-doping (δ-doping) enables metallic-like carrier conductivity within the diamond matrix, bypassing standard dopant activation limits. Optical gating controls carrier transport to eliminate gate capacitance losses, while direct fiber-optic interconnects remove metallic interconnect delays and EMI. Simulations confirm sub-picosecond switching speeds, high thermal stability, and substantial energy efficiency gains, offering a robust blueprint for high-power, quantum-compatible computing.