Dataset description This dataset contains RF characterization data for two memristive devices measured in both Low Resistance State (LRS) and High Resistance State (HRS). The devices were designed, fabricated, and characterized within the TERRAMETA project as candidate reconfigurable switching elements for Reconfigurable Intelligent Surfaces (RIS) operating at high frequencies. The dataset provides two-port S-parameter measurements acquired at a controlled temperature of 25 °C, over a frequency range from 70 kHz to 160 GHz. All S-parameter data are provided as measured, using an LRRM-calibrated ME7838G Anritsu VectorStar Vector Network Analyzer (VNA). The measurements include reference structures and memristor devices in different programmed resistance states, enabling analysis of RF switching behaviour, insertion loss, isolation, parasitic effects, and suitability for integration in RIS unit-cell designs. Data structure All files are provided in standard Touchstone .s2p format. Each file corresponds to a two-port measurement of either a reference structure or a memristor device in a specific resistance state. The file naming convention is: NNx_DEVICE_STATE_RESISTANCE.S2P where: NN identifies the measurement group, x identifies the measurement instance, DEVICE identifies the measured structure or memristor, STATE indicates the resistance state, when applicable (LRS or HRS), RESISTANCE indicates the DC resistance measured after the corresponding set/reset sweep. The files are organized as follows: 01_ISS_THRU.S2PTwo-port measurement of a THRU structure on the impedance reference substrate. 02_THRU_1.S2P and 02_THRU_2.S2PTwo-port measurements of THRU structures fabricated on the same substrate as the memristors. 03a_...S2P to 03d_...S2PTwo-port measurements of the first memristor device switched between HRS and LRS states. The filename includes the DC resistance measured after the corresponding set/reset sweep. 04a_...S2P to 04e_...S2PTwo-port measurements of the second memristor device switched multiple times between LRS and HRS states. The filename includes the corresponding DC resistance value measured after each switching operation. Reuse and relevance This dataset is intended to support reproducibility and further analysis of memristor-based RF switching technologies for RIS and sub-THz reconfigurable hardware. It can be reused for: RF switch modelling and parameter extraction, comparison of HRS/LRS device behaviour, evaluation of insertion loss and isolation across frequency, development of equivalent circuit models, assessment of memristor suitability for RIS unit-cell integration. The dataset is provided as part of the TERRAMETA project’s open data activities to support research on energy-efficient and compact reconfigurable technologies for future 6G systems.