This work presents an experimental study of a hybrid T-type converter using wide-bandgap (WBG) devices, combining the low switching losses of gallium nitride (GaN) with the high-voltage capability of silicon carbide (SiC). Furthermore, an adaptive level-shift algorithm is introduced, enabling operation in both two- and three-level modes, improving fault tolerance and current capability. Experimental validation demonstrates high efficiency, minimal EMI impact at high switching frequencies, and improved THD, confirming the converter as a robust solution for high-performance applications.