This tutorial describes the TCAD workflow developed for the simulation of the Ferroelectric Schottky Barrier Field Effect Transistor (Fe-SBFET). The document contains a description of the approaches and models used in the 2D and 3D TCAD setups, adapted to different device design options. The models have been calibrated to experimental measurements of structures fabricated by collaborators at the Institute of Solid State Electronics in TU Wien. Simulation results and comparison between different models and simulation approaches are presented. TCAD simulations have been performed with Synopsys Sentaurus TCAD.