Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are revolutionizing modern power electronics by enabling higher efficiency, compact design, and superior thermal performance compared to traditional silicon-based devices. These materials provide wide energy bandgaps, higher breakdown voltages, faster switching speeds, and improved thermal conductivity, making them ideal for applications in electric vehicles, renewable energy systems, and high-frequency converters. This paper provides an overview of the fundamental properties of WBG semiconductors, their advantages in power electronics, and the challenges associated with material quality, fabrication cost, and reliability. It also explores emerging trends and research directions that will define the next generation of high-performance power devices.