Abstract The CMPO method for growing CdTe films with different compositions. Isolated ­Cd and Te sources with a purity of 99.9% and 99.999%, respectively, were used. The films were deposited on glass and a molybdenum substrate and kept at a temperature of 500 0 C. The samples were grown at atmospheric pressure in a hydrogen or nitrogen flow. The thickness of ­the obtained films varied from 0.5 to 1.5 μm. The effects of heat treatment on the electrophysical properties of CdTe films obtained ­by the CMPO method were investigated and the physical properties were comprehensively investigated ­. To study the physical properties of CdTe films, the authors ­used a comprehensive research method. The conductivity type of the obtained films, electrical ­conductivity and its temperature dependence, the Hall Effect and measurement of the I–V characteristics of the heterostructure were determined. Optical metallography, X-ray diffraction and atomic force microscopy were also used.