Deliverable D3.1 - Report on optical and passivation potential of front-side layers developed for front-surface of the IBC device
Deliverable D3.1 - Report on optical and passivation potential of front-side layers developed for front-surface of the IBC device
In this period (M12), both low-temperature (CEA, TUD) and high-temperature (ISFH) passivation approaches are developed. CEA developed very promising a-SiOx:H, nc-SiOx:H and nc-Si:H layers in terms of high i-Voc (> 750 mV) and low Jo ( 24 ms). However, both low-temperature approaches are lacking the desired optical transparency (in other words higher Jsc loss than targeted) due to absorbant a-Si:H layers deposited for chemical passivation. On the other hand, high-temperature passivation approach developed by ISFH showed no absorption loss in the 300-1200 nm range thanks to transparent ALD-grown AlOx passivation layers, but with lower passivation properties. It is concluded that utilizing AlOx layers on thinner wafers has the potential to reach the targeted KPIs.
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