X-ray diffractogram of the high-entropy alloy film, displaying a broad peak centred around 45° without distinct reflections. In the paper the data is shown in figure 3. Compositional trends over the nine radial measurement positions (R1–R9) determined with EDS, XRF, HAXPES, ToF-SIMS. HAXPES spectra were recorded after sputtering for one minute with 4kV argon. The ToF-SIMS results were corrected for the different ionization and sputter yields by a correction factor determined at R1 relative to SEM/EDS. This correction allows to compare the trends on the same scale and shall not represent a quantification. In the paper this data is shown in figures 5 (XRF), 6 (all four methods) and table 2 (all four methods, but only positions 1, 5, 9). ToF-SIMS depth profile of the high-entropy film on a silicon substrate. As sputter beam 3 kV oxygen, and as analysis beam, a 25-keV Bi+ beam was applied. The crater depth was determined by WLIM. In the paper the data is shown in figure 4.