1. LEEM images collected during Sb deposition process on the W(110) substrate at temperature of 155 °C. All presented LEEM images were collected with an electron energy of 1.0 eV and FOV = 4 μm. 2. LEED patterns collected for isolated islands of α-Sb and β-Sb phases deposited on W(110) substrate. The diffraction pattern acquired for a clean W(110) substrate with an electron energy of 46 eV and the μLEED patterns collected for islands of α-Sb and β-Sb phases with electron energies of 43 eV and 23 eV, respectively. 3. LEEM images collected for β-Sb islands along with the corresponding micro diffraction patterns. The LEEM images were collected with an electron energy of 1 eV and FOV = 5.0 μm, while the LEED patterns were acquired with an energy of 14 eV. 4. LEEM images showing isotropic character of the orientation of β-Sb islands grown on the Sb wetting layer. 5. Set of LEEM images collected with a function of energy of incident electron beam. Data collected for β-Sb isolated island – start voltage varying from -5 V to 15 V, step 0.1 V and FOV = 4.0 μm. Data collected for α-Sb isolated island – start voltage varying from -5 V to 15 V, step 0.1 V and FOV = 5.0 μm. Data collected for clean W(110) substrate - start voltage varying from -5 V to 15 V, step 0.1 V and FOV = 10.0 μm.