One approach to continue the use of Cu in advanced nodes is to reduce the thickness of the barrier and liner. This reduction will allow more Cu in the trench that will reduce the global resistance of the wires and vias. We study the reliability performance of scaled PVD TaN barriers with a CVD Co or Ru liner in integrated structures. TDDB measurements show that all studied systems keep their Cu barrier properties when measured at 100°C. CCS-TVS measurements show Cu gets mobile at 200°C suggesting defects are present in our barrier/liner systems, where their impact on reliability at lower temperatures remain unclear. Regarding electromigration, we see a difference between using Co or Ru liner. While for a 3nm TaN/1nm Co system we observed voids in some vias, for scaled TaN barriers in combination with Ru liners, we only observed voids along the line suggesting the TaN/Ru barrier liner system is more scalable. An average EA of about 0.9eV was observed for all the TaN/Ru systems, as expected for a system with SiCN cap. This results confirm that TaN/Ru is more scalable towards smaller dimensions making it a promising candidate in advanced nodes. Paper presented at the 2019 IEEE International Interconnect Technology Conference (IITC)