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A Comprehensive Evaluation Of Igbts Performance Under Zero Current Switching

Authors: Ly. Benbahouche;

A Comprehensive Evaluation Of Igbts Performance Under Zero Current Switching

Abstract

{"references": ["JayantBaliga B., \"Modern power devices\", Schenectady, New York: General Electric Company; 1987, December.", "M.Trivedi and K. Shenai, \"Internal dynamics of IGBT under zero voltage switching and zero current switching conditions\", IEEE. Trans. Electron. Devices, Vol.46, June.1999, pp. 1274-1281.", "D. M. Divan, \"The resonant dc link converters \"A new concept in static power conversion in\", IEEE. Ind. ApplAnnu. Meeting Rec 1986 pp. 648-656 cited by", ".", "Ly.Benbahouche, \"Modeling and simulation the steady state and transient characteristics of the power Insulated Gate Bipolar\" Master Thesis U.F.A, Setif, Algeria 1996.", "M.Trivedi and K. Shenai, \"Modeling the turn-off of -IGBT's in hard soft switching applications\", IEEE. Trans. Electron. Devices, Vol.44, May.1997, pp. 887-893.", "T. Paul. Chow, David Lau, \"Performance of 600V n-channel IGBTS at low temperatures\", IEEE. Electron. Devices Letters, Vol.12, N09, Sep.1991, pp. 498-499.", "K.Wang, F.C.Lee, G.G.Hua, and Borojevic, \"A comparative study of switching losses of IGBT's under hard-switching, zero voltage switching and zero current switching\", in Proc. IEEE Power Elec. Spec. Conf., 1994, pp.1196-1204.", "M.Trivedi, R.Evazians, and K. Shenai, \"Test circuits for characterizing power transistors in ZVS and ZCS circuits\", in IEEE. Instrum. Meas. Tech. Conf. Proc., 1998, pp. 515-518.", "A.Elasser, M.Schutten, V.Vlatkovic, D.Torrey and M.Kheraluwala, \" Switching losses of IGBT's under zero voltage and zero current switching\", in Proc. IEEE Power Elec. Spec. Conf., 1996, pp.600-607.\n[10]\tFuji IGBT Data Book, 1994."]}

Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics. The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments. The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device). Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.

Keywords

ZCS, dV/dt., PT-IGBT, turn-off losses

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