{"references": ["H. Yamauchi, \"A Discussion on SRAM Circuit Design Trend in Deeper\nNanometer-Scale Technologies\", Very Large Scale Integration (VLSI)\nSystems, IEEE Transactions on Vol. 18 (2010), Issue :5, pp. 763-774", "H. Yamauchi, \"Embedded SRAM trend in nano-scale CMOS\", Memory\nTechnology, Design and Testing, MTDT 2007. IEEE International\nWorkshop on (2007), pp. 19 - 22.", "H. Yamauchi, \"Variation tolerant SRAM circuit design\" in IEEE ISSCC\n2009 and IEEE A-SSCC 2008", "X. Wang, A.R.Brown, B.Cheng and A.Asenov \"RTS amplitude\ndistribution in 20nm SOI FinFETs subject to Statistical Variability\",\nSISPAD 2012, pp.296-299", "X. Wang, G.Roy, O.Saxod, A.Bajolet and A.Juge, A.Asenov \"Simulation\nStudy of Dominant Statistical Variability Sources in 32-nm High-k/Metal\nGate CMOS\", IEEE Electron Device Letters - IEEE ELECTRON DEV\nLETT , vol. 33, no. 5, pp. 643-645, 2012", "K.P.Cheung, J.P.Campbell, S.Potbhare and A.Oates \" The amplitude of\nrandom telegraph noise: Scaling implications\", Reliability Physics\nSymposium (IRPS), 2012 IEEE International, pp.1.1 - 1.3", "K. Takeuchi, T.Nagumo and T.Hase \"Comprehensive SRAM Design\nMethodology for RTN Reliability\" , Digest of IEEE Symposium on VLSI\nTechnology, (2011), pp. 130-131", "K. Takeuchi, T.Nagumo, K.Takeda, and S.Asayama, S.Yokogawa,\nK.Imai, K.Hayashi \"Direct Observation of RTN-induced SRAM Failure\nby Accelerated Testing and Its Application to Product Reliability\nAssessment \" , Digest of IEEE Symposium on VLSI Technology, (2010),\npp. 189-190", "Moon, T.K, \"The expectation-maximization algorithm\" in Signal\nProcessing Magazine, IEEE, Volume: 13 , Issue: 6, pp. 47 - 60 (1996)"]}

This paper proposes, for the first time, how the challenges facing the guard-band designs including the margin assist-circuits scheme for the screening-test in the coming process generations should be addressed. The increased screening error impacts are discussed based on the proposed statistical analysis models. It has been shown that the yield-loss caused by the misjudgment on the screening test would become 5-orders of magnitude larger than that for the conventional one when the amplitude of random telegraph noise (RTN) caused variations approaches to that of random dopant fluctuation. Three fitting methods to approximate the RTN caused complex Gamma mixtures distributions by the simple Gaussian mixtures model (GMM) are proposed and compared. It has been verified that the proposed methods can reduce the error of the fail-bit predictions by 4-orders of magnitude.