Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K, and a low-field magnetoresistance (LFMR). However, due to different synthesis conditions of ceramics as well as thin films, different mechanisms of electrical conductivity and magnetoresistance prevail. In this work, we consider the weak localization effect in SFMO occurring in disordered metallic or semiconducting systems at very low temperatures due to quantum interference of back-scattered electrons. We calculate the quantum corrections to conductivity and the contribution of electron scattering to the resistivity of SFMO. We attribute the temperature dependence of SFMO ceramics resistivity in the absence of a magnetic field to the fluctuation induced tunneling model. Also, we attribute the decreasing resistivity in the temperature range from 409 K up to 590 K to adiabatic small polaron hopping and not to localization effects. Both fluctuation induced tunneling and adiabatic small polaron hopping do not favor quantum interference. Additionally, we demonstrate that the resistivity upturn behavior of SFMO cannot be explained by weak localization. Consequently, to the best of our knowledge, there is still no convincing evidence for the presence of weak localization in SFMO.