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SGS-Based P+ −P Microbridge Architecture for Harsh-Environment Accelerometers

Authors: Michael Y. Tikhomirov;

SGS-Based P+ −P Microbridge Architecture for Harsh-Environment Accelerometers

Abstract

Piezoresistive accelerometers utilizing a distributed-parameter microbridge (µMC) circuit in a p+-p silicon structure offer a reliable alternative to piezoelectric sensors for extreme operating conditions. This work updates fundamental research from the late 1980s on monolithic integrated piezoresistive transducers by integrating “siliconglass-silicon” (SGS) technology and modern multiphysics modeling (COMSOL). This approach eliminates the use of insulating p-n junctions, involves heavy doping of thepiezoresistive channels, and utilizes charge carrier redistribution in the channels and the elastic element to ensure stable operation at temperatures up to 350◦C and accelerations up to 10,000 g. Simulations confirm excellent performance over a wide range (from ±30 g to ±6000 g) with minimal temperature drift, as well as static and dynamic capabilities and compatibility with commercial data acquisition systems,

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