193nm Optical lithography has powered the industry's growth for the last 10 years and multiple patterning is poised to extend 193nm even further. There is a growing trend in Logic design for manufacturing, with high-volume manufacturing (HVM) firms adopting a layout style using unidirectional single-pitch straight lines in poly and metal layers. These layouts lend themselves to a complementary lithography approach. First, unidirectional lines are patterned with Optical lithography. Second, these lines are "cut" to form the desired layout. In this paper, we present EBDW as a complement to optical lithography for line-cutting. We show how e-beam multiple-column architecture, optimized for line-cutting, is the best for patterning critical layers at advanced nodes as Complementary Lithography.