On the 60 mV/dec @300 K limit for MOSFET subthreshold swing

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Jan 2010Publisher:IEEEJournal:Proceedings of 2010 International Symposium on VLSI Technology, System and Application

Authors: Cheung, Kin P.;

doi: 10.1109/vtsa.2010.5488941

On the 60 mV/dec @300 K limit for MOSFET subthreshold swing

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Abstract

The 60 mV/dec limit for subthreshold swing at 300 K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.

Related Organizations

National Institute of Standards and Technology
United States

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