Downloads provided by UsageCounts
A one-dimensional model is presented which describes the release-etch behavior of sacrificial oxides in aqueous HF. Starting from first principles and an empirical rate law, release etch kinetics are derived for primitive geometries. The behavior of complex three-dimensional structures is described by joining the solutions of constituent primitives and applying appropriate boundary conditions. The two fitting parameters, k/sub 1/ and k/sub 2/, are determined from the simplest structure and describe the more complex structures well. Experimental validation of the model is presented with data for all of the geometries and four types of sacrificial oxides.
Silicon Oxides, Miniaturization, Etching, Mathematical Models, 36 Materials Science, Glass, Hydrofluoric Acid
Silicon Oxides, Miniaturization, Etching, Mathematical Models, 36 Materials Science, Glass, Hydrofluoric Acid
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 4 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Average | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 10% | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |
| views | 2 | |
| downloads | 4 |

Views provided by UsageCounts
Downloads provided by UsageCounts