Si and Si-compatible photodetectors

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 18 Oct 2005Publisher:IEEEJournal:IEEE International Conference on Group IV Photonics, 2005. @nd

Authors: Campbell, J. C.; Zhihong Huang,; Ning Kong,; Jungwoo Oh,;

doi: 10.1109/group4.2005.1516446

Si and Si-compatible photodetectors

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Abstract

We report photodiodes fabricated on Ge grown on Si substrate. At 2 V bias these photodiodes exhibited 28 mA/cm/sup 2/ dark current, 0.57 A/W responsivity, and 4 GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

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The University of Texas at Austin
United States

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