A fast, 128-b implementation of both SRAM and LPROM with integrated periphery in a thin-film amorphous indium–gallium–zinc oxide technology is reported. The SRAM block can be read in 265 $\mu \text{s}$ /byte and written in 110 $\mu \text{s}$ /byte, consumes 12.3 mW, and has an area of 11.9 mm2. Furthermore, after power down, an SRAM memory state retention time of 83 s is shown. The LPROM can be read in 40 $\mu \text{s}$ /b, consumes 4.50 mW, and has an area of 3.75 mm2. The SRAM enables fast volatile RAM memory for thin-film microprocessors, while the LPROM can be used to store the identification code for state-of-the-art thin-film RFID tags.