Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1997Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Magnetics, volume 33, pages 3,298-3,300 (issn: 0018-9464,

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Authors: Oti, J. O.; Russek, S. E.;

doi: 10.1109/20.617923

Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices

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Abstract

The effects of device shape and size on the giant magnetoresistive (MR) response of NiFe/sub 7.5 nm//Co/sub 0.6 nm//Cu/sub 3 nm//Co/sub 0.6 nm//NiFe/sub 7.5 nm//FeMn spin-valve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation. Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 /spl mu/m to 1.5 /spl mu/m are simulated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied.

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National Institute of Standards and Technology
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