Conductive atomic force microscopy studies of thin SiO2 layer degradation

descriptionPublicationkeyboard_double_arrow_right Article 29 May 2006 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 88 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Fiorenza, Patrick; Polspoel, Wouter; Vandervorst, Wilfried;

doi: 10.1063/1.2208370

Conductive atomic force microscopy studies of thin SiO2 layer degradation

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Abstract

The dielectric degradation of ultrathin (∼2nm) silicon dioxide (SiO2) layers has been investigated by constant and ramped voltage stresses with the conductive atomic force microscopy (CAFM). CAFM imaging shows clearly the lateral degradation propagation and its saturation. Current-voltage characteristics, performed at nanometer scale, show the trap creation rate in function of the stress condition. The critical trap density has been found.

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