InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy

T. P. Chin; H. Q. Hou; C. W. Tu; J. C. P. Chang; N. Otsuka

Found an issue? Give us feedback

Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1994 . Peer-reviewed

Data sources: Crossref

https://dx.doi.org/10.1063/1.1...

Article

Data sources: Microsoft Academic Graph

InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy

descriptionPublicationkeyboard_double_arrow_right Article 11 Apr 1994 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 64, pages 2,001-2,003 (issn: 0003-6951, eissn: 1077-3118,

Copyright policy )

Authors: T. P. Chin; H. Q. Hou; C. W. Tu; J. C. P. Chang; N. Otsuka;

doi: 10.1063/1.111719

InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy

- Summary
- Related research
  (8)
- Metrics

Abstract

A linearly graded InxGa1−xP (x=0.48–1) buffer layer is used for growing a high-quality InP layer on a GaAs substrate. We show that an InxGa1−xP buffer layer is superior to an InyGa1−yAs buffer layer because it is transparent to long wavelengths and allows a less stringent composition control. InGaAs/InP single quantum wells and InAsP/InP multiple quantum wells grown on the InP/InxGa1−xP/GaAs substrate show comparable quality to similar structures grown on InP (100) substrates. Photocurrent spectra for the latter exhibit quantum-confined Stark effect near 1.3 μm.

Related Organizations

Purdue University System
United States
University of California, San Diego
United States
Purdue University West Lafayette
United States

8 Research products, page 1 of 1

Growth of very low deep impurity density (N t<5×1011 cm−3) InxGa1−xP on GaAs by metalorganic chemical vapor deposition
1995IsAmongTopNSimilarDocuments
Investigation of graded In Ga1−P buffer by Raman scattering method
2006IsAmongTopNSimilarDocuments
Phase diagram for the In-Ga-P ternary system
1982IsAmongTopNSimilarDocuments
Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature
2016IsAmongTopNSimilarDocuments
Properties of high sensitivity GaP/InxGa1−xP/GaAs : (Cs–O) transmission photocathodes
1979IsAmongTopNSimilarDocuments
Relaxation behavior of undoped InxGa1−xP 0.5<x<0.7 grown on GaAs by atomic layer molecular-beam epitaxy
1996IsAmongTopNSimilarDocuments
Determination of the proportional contents of ingredients in InxAl1−xP, InxGa1−xP, and AlxGa1−xP by radioactive source x-ray fluoroscopy
1980IsAmongTopNSimilarDocuments
Reciprocal space mapping of ordered domains in InxGa1−xP
2000IsAmongTopNSimilarDocuments

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	15
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average