
doi: 10.1063/1.330416
Solidus and liquidus data are presented for the 800 °C isotherm of the InxGa1−xP ternary system. The data extend over the region 0.49<x<0.90, and have been developed by growing epitaxial layers of InxGa1−xP on InyGa1−yAs, InP, and GaAs substrates. The simple solution model is used to predict solidus and liquidus isotherms which fit the data.
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