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Influence of Intercalation on The Electrophysical Properties of Layered Semiconductors Bi2Te3 and InSe

Authors: V. A. Kulbachinskii; M. Z. Kovalyuk; M. N. Pyrlya;

Influence of Intercalation on The Electrophysical Properties of Layered Semiconductors Bi2Te3 and InSe

Abstract

The Li and Ba atoms were intercalated into the van der Waals gaps of Bi 2 Te 3 , solid solutions based on Bi 2 Te 3 and β-polytype of InSe single crystals of nand p-types. The temperature dependence of resistivity, the Hall effect and the Shubnikov- de Haas effect were investigated in host single crystals and after an inter calation. The intercalation of metallic atoms causes a change in carrier concentration and hence, the Fermi energy. The intercalated Bi 2 Te 3 samples possess the same six-ellipsoidal Fermi surface as the host material 2D weak localisation was observed in the host n-InSe which was suppressed by an intercalation

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
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