A super-resolution near-field structure (super-RENS; ZnS–SiO2/Sb75Te25/ZnS–SiO2) and a read-only-memory (ROM) substrate with its pit wide in the radial direction (200 nm) are combined. The readout of 50-nm-long pits was examined, and the pit length is less than one third the resolution limit of the optics (laser wavelength: 405 nm, numerical aperture: 0.65) used. The carrier-to-noise ratio obtained was 39 dB, and it was possible to observe the reproduced waveform clearly. The results indicate that the capacity along the tangential direction can be increased by a factor of 4.