Structure of an extremely thin film of a-SiO2

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1987 English Publisher:Elsevier BVJournal:Journal of Non-Crystalline Solids, volume 95-96, pages 1,095-1,101 (issn: 0022-3093,

Authors: K. Miura; M. Tada; H. Ohsaki; S. Kodera; T. Ino;

doi: 10.1016/s0022-3093(87)80721-4

Structure of an extremely thin film of a-SiO2

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Abstract

Abstract By means of electron beam evaporation, we have succeeded inpreparing a substrate-free amorphous SiO 2 (a-SO 2 ) film 4A in thickness for electron diffraction study. The analysis of the diffraction intensity from the film has detected atomic distances of 1.54A and 2.48A as those of Si-0 bond distance and O--O distance; which are considerably shorter than Si O bond distance and O--O distance observed by X-ray diffraction in ordinary a-SO 2 : 1.62A and 2.65A. This result reveals that the structure of extremely thin a-SO 2 film is different from the bulk structure in a-SO 2 material.

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Osaka Metropolitan University
Japan
Aichi University of Education
Japan

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