Two lithographic processes for phase-shift mask (PSM) manufacturing have been investigated. In particular, processes in E-beam (electron beam) lithography by use of a charge-dissipating layer of a conductive polymer are studied. Two commercial conductive polymers, TQV and ESPACER100, are found to work well for charge-dissipation. Three new resists along with CMS and EBR9 are evaluated regarding their properties necessary for patterning a shifter layer. Among them two new resists are demonstrated to be excellent. The effect of the number of data-blocks on the alignment accuracy is examined in delineation with a Hitachi HL-600, where each data-block has four fine-alignment marks. The examination suggests that the use of one or two data-blocks is practical. As to combination of writers for the Cr level and the shifter level, HL-600 - HL-600 gave better alignment accuracy than the other combinations, WW6000 - HL-600 and MEBES III - HL-600, did. The comparison between the E-beam and the laser writers is summarized.