Determination of the conduction-band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

descriptionPublicationkeyboard_double_arrow_right Article 03 Apr 1995 Korea (Republic of) English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 66, pages 1,785-1,787 (issn: 0003-6951, eissn: 1077-3118,

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Authors: CHO, YH Cho, Yong-Hoon; KIM, KS; RYU, SW; KIM, SK; CHOE, BD; LIM, H;

doi: 10.1063/1.113321

handle: 10203/74033

Determination of the conduction-band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

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Abstract

The conduction-band discontinuity ΔEc and interface charge density σ have been studied for In0.5Ga0.5P/In1−xGaxAs1−yPy (y<0.3) heterojunctions prepared by liquid phase epitaxy. The carrier concentration profiles of both normal (In0.5Ga0.5P on In1−xGaxAs1−yPy) and inverted (In1−xGaxAs1−yPy on In0.5Ga0.5P) structures are obtained by capacitance–voltage measurements, which agree well with the results of the self-consistent numerical calculations. The current–voltage and deep-level transient spectroscopy measurements confirm the validity of the result. It is found that ΔEc corresponds to 18% of the band-gap difference ΔEg, for both normal and inverted structures.

Country

Korea (Republic of)

Related Organizations

Seoul National University
Korea (Republic of)
Ajou University
Korea (Republic of)
Korea Advanced Institute of Science and Technology
Korea (Republic of)

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