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Publikationenserver der Georg-August-Universität Göttingen
Article . 2018
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Physical Review Letters
Article . 2005
Data sources: Europe PubMed Central
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Origin of Schottky barriers in gold contacts on GaAs110.

descriptionPublicationkeyboard_double_arrow_right Article 14 Jan 2005 Germany English Publisher:Amer Physical SocJournal:Physical review letters, volume 93 (issn: 0031-9007, Copyright policy )
Authors: Reusch, T. C. G.; Wenderoth, Martin; Winking, L.; Quaas, N.; Ulbrich, Rainer G.;

pmid: 15600951

Origin of Schottky barriers in gold contacts on GaAs110.

Abstract

Gold contacts on n-type GaAs(110) have been investigated using scanning tunneling microscopy and spectroscopy in cross-sectional configuration. In spatially resolved current voltage spectroscopy the Schottky barrier potential is visible. We find signatures of delocalized gap states at the interface decaying into the semiconductor and observe a defect density at the interface below 3 x 10(13) cm(-2). Both findings support that the Fermi level pinning at the Au/GaAs(110) interface is dominated by metal-induced gap states.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
16
Average
Top 10%
Top 10%
Green