Design, fabrication, and characterization of normally-off GaN hemts
Design, fabrication, and characterization of normally-off GaN hemts
GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon based power devices owing to the superior material properties of GaN such as high-electric breakdown field, high-electron saturation velocity, and high mobility. Normally-off GaN HEMT devices are particularly significant in power electronics applications. In this thesis, a comprehensive study of normally-off high-electron-mobility transistors is presented, including theoretical background review, theoretical analysis, physically-based device simulations, device fabrication and optimization and electrical characterization. p-GaN gate InAlN/GaN HEMT and recessed AlGaN/GaN MISHEMT devices have been successfully demonstrated.
Includes bibliographical references (leaves 110-115).
Cataloged from PDF version of article.
by Melisa Ekin Gülseren
- Bilkent University Turkey
Fluorine treatement, Threshold voltage, p-GaN, Elektrik ve Elektronik Mühendisliği, Atomic layer deposition, Alumina, Recess etch, Normally-off, GaN, InAlN, Power electronics, HEMT, Electrical and Electronics Engineering
Fluorine treatement, Threshold voltage, p-GaN, Elektrik ve Elektronik Mühendisliği, Atomic layer deposition, Alumina, Recess etch, Normally-off, GaN, InAlN, Power electronics, HEMT, Electrical and Electronics Engineering
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