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Ultrasonik sprey piroliz tekniği ile depolanan bor-katkılı CDS filmlerinin incelenmesi

Authors: KELLEGÖZ, Murat; ÇAKO, Hilal; UZKALAN, Seda; KÖSE, Salih;

Ultrasonik sprey piroliz tekniği ile depolanan bor-katkılı CDS filmlerinin incelenmesi

Abstract

Bor katkısının CdS filmlerin yapısal, yüzeysel, optik ve elektriksel özellikleri üzerindeki etkisi tartışılmıştır. Bor katkılı ince filmler, 300±5°C’de ultrasonik sprey piroliz tekniği ile kadmiyum klorid (CdCl2; 0.05M), tiyüre (CS(NH2)2; 0.05M) ve borik asit (H3BO3; 0.05M) sulu çözeltisi kullanılarak payreks cam üzerine çöktürülerek elde edilmişlerdir. Çöktürülen ince filmlerin optik, elektriksel, yapısal ve yüzey özellikleri UV spektrofotometre, dört prob tekniği, SEM, AFM ve XRD ile incelenmiştir. X-ışını kırınımı çalışması, filmlerin düşük boron katkıları için (011) düzleminde tercihli yönelmeye polikristalin olduğunu göstermektedir. Bununla birlikte, tercihli yönelme (002) olarak değişmiştir. Bor konsantrasyonu arttıkça tane boyu da artmıştır. Katkısız ve bor katkılı CdS ince filmlerin optik bant aralıkları 2.39-2.46 eV aralığında bulunmuştur. Tane boyutu dağılımı 30.8-115.4 nm aralığında elde edilmiştir.

The influence of boron doping on the structural, surface, optical, and electrical properties of CdS films is discussed. Boron doped samples were deposited on pyrex glass slide using aqueous solution of cadmium chloride (CdCl2; 0.05 M), thiourea (CS(NH2)2; 0.05 M) and boric acid (H3BO3; 0.05 M) by ultrasonic spray pyrolysis technique at 300±5°C. Optical, electrical, structural and surface properties of the deposited thin films were studied by UV spectrophotometer, four probe technique, SEM, AFM, and XRD. XRD study shows that films are polycrystalline with preferred orientation through (011) plane for low boron in corporations. However, preferential orientation changed to (002). The grain size has increased with increasing boron concentration. The optical band gap of the undoped and boron doped CdS samples were found in the range of 2.39-2.46 eV. Grain size distribution is obtained in the range of 30.8-115.4 nm

Country
Turkey
Keywords

Boron Doped CdS Films, CDS Film, Semiconductor Films, Yarı İletken Filmler, Bor, Bor Katkılı CdS Filmler, Fotovoltaik Güneş Pili, İletken, Yarı İletken Filmler;Bor Katkılı CdS Filmler;Fotovoltaik Güneş Pili, Photovoltaic Solar Cell

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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