In this work, investigation of light elements incorporated in the amorphous silicon network of hydrogenated and nanocrystalline silicon were analysed by using ion beam analytical techniques. To do this, amorphous silicon films were deposited by hot wire chemical vapour deposition, and a unique sampling method was developed for the analysis of nanocrystalline silicon powder. The combinations of non destructive, quantitative and sensitive Rutherford backscattering, resonance scattering and elastic recoil detection analysis were used in analysing these samples.

Includes bibliographical references (leaves 83-87).

Word processed copy.