Electroluminescent organic transistor (1) in which there is a semiconductor heterostructure (12) constituted by a plurality of layers of semiconductor materials of p-type and n-type (15, 15', 15", 15"'), which act, respectively, for the conduction of holes and electrons within said heterostructure (12), and at least two layers of emitting materials (16, 16', 16") each of which is interposed between, and in direct contact with, one of said layers of p-type semiconductor material and one of said layers of n-type semiconductor material (15, 15', 15", 15"').