Thin-film chalcopyrite based Cu(In;Ga)Se2 solar cells with a metal wrap through interconnection were investigated by non-destructive methods in our research. The primary focus of this investigation was a detection and a localization of microstructural defects in this type of Cu(In;Ga)Se2 solar cells. A combination of a visible and near infrared electroluminescence with a lock-in thermography was used for these purposes. Mainly the electroluminescence was a very sensitive tool for an indication of pre-breakdown sites influenced by a trap-assisted tunneling or stress-induced leakage currents. A strong correlation between electroluminescence maps and lock-in thermograms was obtained after a local breakdown accompanied by a creation of permanent defect.